Invention Grant
- Patent Title: Dynamic random access memory (DRAM) multi-wordline direct refresh management including aliasing row counter policy for row hammer mitigation
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Application No.: US17896337Application Date: 2022-08-26
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Publication No.: US12131768B2Publication Date: 2024-10-29
- Inventor: Kang-Yong Kim , Yang Lu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wood IP LLC
- Agent Theodore A. Wood
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/4078 ; G11C11/408

Abstract:
Systems and methods for multi-wordline direct refresh operations in response to a row hammer error in a memory bank. The approach includes detecting, by a row hammer mitigation component, a row hammer error in a memory bank; and then triggering, by the row hammer mitigation component, a response to the row hammer error. Further, a memory controller receives, from a mode register, data, based on an aliasing row counter policy, selecting a type of multi-wordline direct refresh operation to be performed on a plurality of victim memory rows within the memory bank, wherein the plurality of victim memory rows are dispersed across a plurality of memory sub-banks. The approach includes concurrently executing the selected multi-wordline direct refresh operation to the plurality of victim memory rows.
Public/Granted literature
- US20230238045A1 DYNAMIC RANDOM ACCESS MEMORY MULTI-WORDLINE DIRECT REFRESH MANAGEMENT Public/Granted day:2023-07-27
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