Dynamic random access memory (DRAM) multi-wordline direct refresh management including aliasing row counter policy for row hammer mitigation
Abstract:
Systems and methods for multi-wordline direct refresh operations in response to a row hammer error in a memory bank. The approach includes detecting, by a row hammer mitigation component, a row hammer error in a memory bank; and then triggering, by the row hammer mitigation component, a response to the row hammer error. Further, a memory controller receives, from a mode register, data, based on an aliasing row counter policy, selecting a type of multi-wordline direct refresh operation to be performed on a plurality of victim memory rows within the memory bank, wherein the plurality of victim memory rows are dispersed across a plurality of memory sub-banks. The approach includes concurrently executing the selected multi-wordline direct refresh operation to the plurality of victim memory rows.
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