- 专利标题: Semiconductor device
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申请号: US18512527申请日: 2023-11-17
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公开(公告)号: US12131999B2公开(公告)日: 2024-10-29
- 发明人: Jungho Do , Sanghoon Baek
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR 20200103160 2020.08.18
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L27/02 ; H01L27/092 ; H01L29/423 ; H01L29/786
摘要:
A semiconductor device includes a substrate having an active region, a first group of standard cells arranged in a first row on the active region of the substrate and having a first height defined in a column direction, a second group of standard cells arranged in a second row on the active region of the substrate, and having a second height, and a plurality of power lines extending in a row direction and respectively extending along boundaries of the first and the second groups of standard cells. The first and second groups of standard cells each further include a plurality of wiring lines extending in the row direction and arranged in the column direction, and at least some of wiring lines in at least one standard cell of the first and second groups of standard cells are arranged at different spacings and/or pitches.
公开/授权文献
- US20240088039A1 SEMICONDUCTOR DEVICE 公开/授权日:2024-03-14
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