Invention Grant
- Patent Title: Memristor and preparation method thereof
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Application No.: US17477119Application Date: 2021-09-16
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Publication No.: US12133478B2Publication Date: 2024-10-29
- Inventor: Huaqiang Wu , He Qian , Xinyi Li
- Applicant: TSINGHUA UNIVERSITY
- Applicant Address: CN Beijing
- Assignee: TSINGHUA UNIVERSITY
- Current Assignee: TSINGHUA UNIVERSITY
- Current Assignee Address: CN Beijing
- Agency: Loeb & Loeb LLP
- Priority: CN 2011001124.3 2020.09.22
- Main IPC: H10N70/00
- IPC: H10N70/00 ; H10B63/00 ; H10N70/20

Abstract:
A memristor and a preparation method thereof are provided. The memristor includes at least one memristive unit, each of the at least one memristive unit includes a transistor and at least one memristive component, the transistor includes a source electrode and a drain electrode; and each of the at least one memristive component includes a first electrode, a resistive layer, a second electrode, and a passivation layer, the first electrode is electrically connected with the source electrode or the drain electrode; the resistive layer is provided between the first electrode and the second electrode; and the passivation layer at least covers a sidewall of the resistive layer.
Public/Granted literature
- US20220093855A1 MEMRISTOR AND PREPARATION METHOD THEREOF Public/Granted day:2022-03-24
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