Invention Grant
- Patent Title: Damage implantation of cap layer
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Application No.: US17548827Application Date: 2021-12-13
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Publication No.: US12154987B2Publication Date: 2024-11-26
- Inventor: Mahalingam Nandakumar , Wayne Bather , Narendra Singh Mehta
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L21/3115

Abstract:
A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.
Public/Granted literature
- US20220102553A1 DAMAGE IMPLANTATION OF CAP LAYER Public/Granted day:2022-03-31
Information query
IPC分类: