A method for manufacturing a light-emitting element includes: providing a semiconductor stacked body including a first semiconductor layer, an active layer, and a second semiconductor layer, formed in this order on a substrate; exposing a surface of the first semiconductor layer by removing the substrate; and forming a protective film on the surface of the first semiconductor layer by performing steps including: forming a first layer on the surface of the first semiconductor layer by chemical vapor deposition while introducing a source gas to a film formation chamber at a first flow rate, and forming a second layer on the first layer by chemical vapor deposition while introducing a source gas to the film formation chamber at a second flow rate, the second flow rate being less than the first flow rate.