Invention Grant
- Patent Title: Substrate, semiconductor device package and method of manufacturing the same
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Application No.: US18375140Application Date: 2023-09-29
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Publication No.: US12165963B2Publication Date: 2024-12-10
- Inventor: Cheng-Lin Ho , Chih-Cheng Lee
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/31

Abstract:
A substrate includes a first dielectric layer having a first surface and a second dielectric layer having a first surface disposed adjacent to the first surface of the first dielectric layer. The substrate further includes a first conductive via disposed in the first dielectric layer and having a first end adjacent to the first surface of the first dielectric layer and a second end opposite the first end. The substrate further includes a second conductive via disposed in the second dielectric layer and having a first end adjacent to the first surface of the second dielectric layer. A width of the first end of the first conductive via is smaller than a width of the second end of the first conductive via, and a width of the first end of the second conductive via is smaller than the width of the first end of the first conductive via.
Public/Granted literature
- US20240030120A1 SUBSTRATE, SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2024-01-25
Information query
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