A data structure including a target read voltage level corresponding to each set of values of a plurality of sets of values corresponding to a plurality of operating characteristics is stored. In response to a read command associated with a memory cell, a current set of measured values of the plurality of operating characteristics associated with the memory cell is measured. A match between a first set of values of the plurality of sets of values corresponding to the plurality of operating characteristics and the current set of measured values is identified. Using the data structure, a first stored target read voltage level corresponding to the match between the first set of values and the current set of measured values is identified. The read command is executed using the first stored target read voltage level.