Invention Grant
- Patent Title: Method and non-transitory computer-readable storage medium and apparatus for reading data with optimization read voltage table
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Application No.: US18080842Application Date: 2022-12-14
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Publication No.: US12175092B2Publication Date: 2024-12-24
- Inventor: Chun-Yi Chen , Hsiao-Te Chang
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Zhubei
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Zhubei
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: CN202210420240.1 20220421
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for reading data with an optimization read voltage (RV) table. The method includes: determining one set of RVs for a designated memory-cell type according to a current environmental parameter of a NAND-flash module and content of the optimization RV table; and reading data on a page corresponding to the designated memory-cell type from the NAND-flash module with the set of RVs. The optimization RV table includes multiple records and each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.
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