Invention Grant
- Patent Title: Array substrate
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Application No.: US17419294Application Date: 2021-05-24
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Publication No.: US12183752B2Publication Date: 2024-12-31
- Inventor: Fuhsiung Tang , Fan Gong , Fei Ai , Jiyue Song
- Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Hubei
- Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Hubei
- Priority: CN202110501485.2 20210508
- International Application: PCT/CN2021/095384 WO 20210524
- International Announcement: WO2022/236868 WO 20221117
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An array substrate is disclosed. The array substrate includes a semiconductor layer integrated with a PIN photoelectric diode and an active area. The PIN photoelectric diode includes a P-type semiconductor area, an N-type semiconductor area, and an I-type semiconductor area defined between the P-type semiconductor area and the N-type semiconductor area. A gate electric current is introduced at a location corresponding to the I-type semiconductor area, so as to enhance light sensitivity.
Public/Granted literature
- US20240030248A1 ARRAY SUBSTRATE Public/Granted day:2024-01-25
Information query
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