Invention Grant
- Patent Title: Optoelectronic device including ultrathin dopant layers
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Application No.: US17530817Application Date: 2021-11-19
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Publication No.: US12185557B2Publication Date: 2024-12-31
- Inventor: Stephen R. Forrest , Chan Ho Soh
- Applicant: The Regents of the University of Michigan
- Applicant Address: US MI Ann Arbor
- Assignee: The Regents of the University of Michigan
- Current Assignee: The Regents of the University of Michigan
- Current Assignee Address: US MI Ann Arbor
- Agency: Riverside Law LLP
- Main IPC: H10K30/80
- IPC: H10K30/80 ; H10K50/11 ; H10K50/15 ; H10K102/00

Abstract:
An optoelectronic device comprises a first electrode; a first host material layer positioned over the first electrode; a second host material layer positioned over the first host material layer; at least one ultrathin dopant layer positioned between the first and second host material layers, the at least one ultrathin dopant layer having a thickness of less than 2 Å; and a second electrode positioned over the second host material layers. Other organic optoelectronic devices are also disclosed.
Public/Granted literature
- US20220181573A1 OPTOELECTRONIC DEVICE INCLUDING ULTRATHIN DOPANT LAYERS Public/Granted day:2022-06-09
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