Invention Grant
- Patent Title: Hybrid smart verify for QLC/TLC die
-
Application No.: US17895412Application Date: 2022-08-25
-
Publication No.: US12205657B2Publication Date: 2025-01-21
- Inventor: Xiang Yang , Henry Chin , Erika Penzo , Muhammad Masuduzzaman
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C16/14

Abstract:
Technology is disclosed herein for smart verify in a memory system that has a four bit per cell program mode (or X4 mode) and also a three bit per cell program mode (or X3 mode). The X3 mode uses a three-bit gray code that is based on a four-bit gray code of the X4 mode. The memory system skips verify of states in the X3 mode, while using a considerable portion of the programming logic from the X4 mode. In one X3 mode the memory system skips B-state verify while the number of memory cells having a Vt above an A-state verify voltage is below a threshold. In one X3 mode the memory system determines whether to skip verify for a first set of data states based on a first test and determines whether to skip verify for a second set of data states based on a second test.
Public/Granted literature
- US20240071524A1 HYBRID SMART VERIFY FOR QLC/TLC DIE Public/Granted day:2024-02-29
Information query