Invention Grant
- Patent Title: FinFET semiconductor device
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Application No.: US16526756Application Date: 2019-07-30
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Publication No.: US12206001B2Publication Date: 2025-01-21
- Inventor: Bin Yang , Haining Yang , Xia Li
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/762 ; H01L21/8234 ; H01L27/088
Abstract:
A semiconductor device is disclosed that includes a plurality of fins on a substrate. A long channel gate is disposed over a first portion of the plurality of fins. A gate contact is provided having an extended portion that extends into an active area from a gate contact base outside the active area.
Public/Granted literature
- US20210036120A1 FINFET SEMICONDUCTOR DEVICE Public/Granted day:2021-02-04
Information query
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