Invention Grant
- Patent Title: Semiconductor die with transformer and ESD clamp circuit
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Application No.: US17938151Application Date: 2022-10-05
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Publication No.: US12206237B2Publication Date: 2025-01-21
- Inventor: Dolphin Abessolo Bidzo , Shailesh Kulkarni , Juan Felipe Osorio Tamayo
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent David G. Dolezal
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01F27/28

Abstract:
A semiconductor die includes a transformer with terminals of a first winding electrically coupled to external die terminals of the semiconductor die. The terminals of a second winding of the transformer are coupled to internal circuitry of the semiconductor die. An ESD clamp circuit is electrically coupled to the center tap of the second winding of the transformer. When made conductive during and ESD event, the ESD clamp circuit discharges ESD current between the center tap and a supply rail.
Public/Granted literature
- US20240120734A1 SEMICONDUCTOR DIE WITH TRANSFORMER AND ESD CLAMP CIRCUIT Public/Granted day:2024-04-11
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