A diode and method of design the layout of the same having reduced parasitic capacitance is disclosed. In particular, the diode for providing fast response protection of an RF circuit from a high power noise event, such as an ESD, voltage spike, power surge or other noise is disclose. The parasitic capacitance in disclosed circuit is a greatly reduced compared to the prior art, thus significantly increasing the speed of the response to dissipate all high power noise events.