- Patent Title: Method for manufacturing dielectric sheet, method for manufacturing substrate for high-frequency printed wiring board, dielectric sheet, and substrate for high-frequency printed wiring board
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Application No.: US17632016Application Date: 2021-05-11
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Publication No.: US12213249B2Publication Date: 2025-01-28
- Inventor: Shingo Kaimori , Takashi Ninomiya , Motohiko Sugiura , Yasuhiro Okuda , Hideki Kashihara , Satoshi Kiya , Makoto Nakabayashi , Kentaro Okamoto , Chiaki Tokuda
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD. , SUMITOMO ELECTRIC PRINTED CIRCUITS, INC.
- Applicant Address: JP Osaka; JP Shiga
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.,SUMITOMO ELECTRIC PRINTED CIRCUITS, INC.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.,SUMITOMO ELECTRIC PRINTED CIRCUITS, INC.
- Current Assignee Address: JP Osaka; JP Shiga
- Agency: IPUSA, PLLC
- Priority: JP2020-087052 20200518
- International Application: PCT/JP2021/017917 WO 20210511
- International Announcement: WO2021/235276 WO 20211125
- Main IPC: H05K1/03
- IPC: H05K1/03 ; B29C48/00 ; B29C48/08 ; B32B15/082 ; B32B15/20 ; H05K1/02 ; H05K3/00 ; H05K3/02 ; H05K3/38 ; B29K27/18 ; B29K509/00 ; B29L31/34

Abstract:
A method for manufacturing a dielectric sheet, includes the steps of extrusion molding a mixture including powder polytetrafluoroethylene and spherical silica at a temperature lower than or equal to a melting point of the polytetrafluoroethylene, and calendering a sheet body obtained by the extrusion molding. A mass ratio of the silica with respect to the polytetrafluoroethylene is 1.3 or greater. An average particle diameter of the silica is 0.1 μm or greater but 3.0 μm or less. A reduction ratio of the extrusion molding is 8 or less.
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