Invention Grant
- Patent Title: Driving connection structures of memory devices
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Application No.: US17574170Application Date: 2022-01-12
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Publication No.: US12218061B2Publication Date: 2025-02-04
- Inventor: Ya-Chun Tsai
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Fish & Richardson P.C.
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L23/528 ; H10B41/27 ; H10B43/27

Abstract:
Methods, systems and apparatus for managing driving connection structures of memory devices, e.g., three-dimensional memory devices. In one aspect, a semiconductor device includes: a first array structure of memory cells including first conductive layers, a second array structure of memory cells including second conductive layers, a connection structure arranged between the first and second array structures along a first direction, and a circuit arranged adjacent to the connection structure. The connection structure includes: first and second connection areas through which the first and second conductive layers are electrically connectable to the circuit, a first stepped structure configured to individually expose the first conductive layers in the first array structure, a second stepped structure configured to individually expose the second conductive layers in the second array structure. The first and second stepped structures are arranged between the first and second connection areas along a second direction perpendicular to the first direction.
Public/Granted literature
- US20230223343A1 DRIVING CONNECTION STRUCTURES OF MEMORY DEVICES Public/Granted day:2023-07-13
Information query
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