Invention Grant
- Patent Title: CSI with controllable isolation structure and methods of manufacturing and using the same
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Application No.: US17372888Application Date: 2021-07-12
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Publication No.: US12218166B2Publication Date: 2025-02-04
- Inventor: Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Wen-Chang Kuo , Shih-Han Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146

Abstract:
A metal grid within a trench isolation structure on the back side of an image sensor is coupled to a contact pad so that a voltage on the metal grid is continuously variable with a voltage on the contact pad. One or more conductive structures directly couple the metal grid to a contact pad. The conductive structures may bypass a front side of the image sensor. A bias voltage on the metal grid may be varied through the contact pad whereby a trade-off between reducing cross-talk and increasing quantum efficiency may be adjusted dynamically in accordance with the application of the image sensor, its environment of use, or its mode of operation.
Public/Granted literature
- US20220336505A1 CSI WITH CONTROLLABLE ISOLATION STRUCTURE AND METHODS OF MANUFACTURING AND USING THE SAME Public/Granted day:2022-10-20
Information query
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