A semiconductor device includes a conductive resin layer that includes an insulating resin and first fillers dispersed in the insulating resin and has first and second main surfaces, and an element layer that is arranged on the first main surface and includes a semiconductor element. The first fillers are each a fibrous conductive filler. The conductive resin layer has a first surface layer section that includes the first main surface and has a thickness which is 30% of a thickness of the conductive resin layer, a second surface layer section that includes the second main surface and has a thickness which is 30% of the thickness of the conductive resin layer, and an intermediate layer section arranged between the first and second surface layer sections. First fillers have a smaller directional angle relative to the first main surface in the first surface layer section than in the intermediate layer section.