Invention Grant
- Patent Title: Built-in self-test circuits for memory systems having multiple channels
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Application No.: US18059462Application Date: 2022-11-29
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Publication No.: US12230345B2Publication Date: 2025-02-18
- Inventor: Jaewon Park , Shinhaeng Kang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2021-0175214 20211208,KR10-2022-0065291 20220527
- Main IPC: G11C29/12
- IPC: G11C29/12 ; G06F11/00 ; G11C29/28 ; G11C29/36

Abstract:
A memory system includes a plurality of memory devices having respective arrays of memory cells therein, a bus electrically coupled to and shared by the plurality of memory devices, and a memory controller. The memory controller, which is electrically coupled to the bus, includes a built-in self-test (BIST) circuit, which is commonly connected to the plurality of memory devices. The BIST circuit is configured to transfer a command set including a test pattern to the plurality of memory devices via the bus, and transfer a command trigger signal for driving the test pattern to the plurality of memory devices via the bus.
Public/Granted literature
- US20230178166A1 BUILT-IN SELF-TEST CIRCUITS FOR MEMORY SYSTEMS HAVING MULTIPLE CHANNELS Public/Granted day:2023-06-08
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