Invention Grant
- Patent Title: Photodetector and image sensor including the same
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Application No.: US17668566Application Date: 2022-02-10
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Publication No.: US12230651B2Publication Date: 2025-02-18
- Inventor: Sungjun Kim , Jin-Hong Park , Sunghun Lee , Keun Heo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2021-0067460 20210526
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146

Abstract:
A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction intersecting the gate electrode, the light absorbing layer including a two-dimensional (2D) material of a layered structure, a source electrode on the ferroelectric layer and connected to a first end of the light absorbing layer, and a drain electrode on the ferroelectric layer and connected to the a second end of the light absorbing layer.
Public/Granted literature
- US20220384500A1 PHOTODETECTOR AND IMAGE SENSOR INCLUDING THE SAME Public/Granted day:2022-12-01
Information query
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