Invention Grant
- Patent Title: Electronic device and method of manufacturing the same
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Application No.: US18487275Application Date: 2023-10-16
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Publication No.: US12230711B2Publication Date: 2025-02-18
- Inventor: Jinseong Heo , Sangwook Kim , Yunseong Lee , Sanghyun Jo , Hyangsook Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: HARNESS, DICKEY & PIERCE, P.L.C.
- Priority: KR10-2019-0114968 20190918
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/40 ; H01L29/78

Abstract:
Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.
Public/Granted literature
- US20240038891A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2024-02-01
Information query
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