Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
-
Application No.: US18321917Application Date: 2023-05-23
-
Publication No.: US12237265B2Publication Date: 2025-02-25
- Inventor: Sangoh Park , Dongjun Lee , Keunnam Kim , Seunghune Yang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2020-0094363 20200729
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L23/528 ; H01L29/786 ; H10B12/00

Abstract:
A semiconductor device may include a substrate including a cell region and a core/peripheral region. A plurality of bit line structures may be in the cell region of the substrate. A gate structure may be in the core/peripheral regions of the substrate. A lower contact plug and an upper contact plug may be between the bit line structures. The lower contact plug and the upper contact plug may be stacked in a vertical direction. A landing pad pattern may contact an upper sidewall of the upper contact plug. The landing pad pattern may be between an upper portion of the upper contact plug and an upper portion of one of the bit line structures. An upper surface of the landing pad pattern may be higher than an upper surface of each of the bit line structures. A peripheral contact plug may be formed in the core/peripheral regions of the substrate. A wiring may be electrically connected to an upper surface of the peripheral contact plug.
Public/Granted literature
- US20230290727A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2023-09-14
Information query
IPC分类: