Invention Grant
- Patent Title: Semiconductor package
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Application No.: US17749825Application Date: 2022-05-20
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Publication No.: US12243791B2Publication Date: 2025-03-04
- Inventor: Sunghawn Bae , Doohwan Lee , Jooyoung Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0137526 20181109
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L21/48 ; H01L23/00 ; H01L23/31 ; H01L23/367 ; H01L23/373 ; H01L23/498

Abstract:
Provided is method of manufacturing a semiconductor device. The method includes: forming a metal layer on a carrier; forming a conductor pattern layer on the metal layer; mounting a semiconductor chip on a tape; forming an encapsulant covering the semiconductor chip; attaching the conductor pattern layer to the encapsulant; removing the tape; and forming a connection structure electrically connected to the semiconductor chip in an area from which the tape is removed.
Public/Granted literature
- US20220278011A1 SEMICONDUCTOR PACKAGE Public/Granted day:2022-09-01
Information query
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