Invention Grant
- Patent Title: Flow control method using plasma system
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Application No.: US18197919Application Date: 2023-05-16
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Publication No.: US12247290B2Publication Date: 2025-03-11
- Inventor: Suncheul Kim , Donghyun Lee , Uihyoung Lee , Donghoon Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2022-0089688 20220720
- Main IPC: C23C16/52
- IPC: C23C16/52 ; C23C16/448 ; C23C16/505

Abstract:
Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.
Public/Granted literature
- US20240026539A1 FLOW CONTROL METHOD USING PLASMA SYSTEM Public/Granted day:2024-01-25
Information query
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