A page swap method, a storage system, and an electronic device as applied to the field of memory management technologies are provided. The method includes determining, from a least recently used LRU linked list, a to-be-swapped-out first swap-out page of a memory device, determining a second swap-out page from the LRU linked list based on the first swap-out page, and when the first swap-out page is swapped out of the memory device, swapping out the first swap-out page and the second swap-out page to a swap device.