Invention Grant
- Patent Title: Semiconductor device including backside wiring structure with super via
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Application No.: US17581084Application Date: 2022-01-21
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Publication No.: US12249557B2Publication Date: 2025-03-11
- Inventor: Seung Ha Oh , Kwang Jin Moon , Ho-Jin Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2021-0070672 20210601
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L21/8234 ; H01L23/50 ; H01L23/522 ; H01L23/528 ; H01L23/535 ; H01L23/538 ; H01L27/088

Abstract:
A semiconductor device comprises a substrate that including a frontside comprising an active region and a backside opposite to the frontside, an electronic element on the active region, a frontside wiring structure electrically connected to the electronic element on the frontside of the substrate, and a backside wiring structure electrically connected to the electronic element on the backside of the substrate. The backside wiring structure includes a plurality of backside wiring patterns sequentially stacked on the backside of the substrate, and a super via pattern that intersects and extends through at least one layer of the plurality of backside wiring patterns.
Public/Granted literature
- US20220384311A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-12-01
Information query
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