Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
-
Application No.: US17824004Application Date: 2022-05-25
-
Publication No.: US12255120B2Publication Date: 2025-03-18
- Inventor: Yoshitaka Kato , Takeshi Endo , Kazuhiro Tsuruta
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation
- Applicant Address: JP Kariya; JP Toyota; JP Nisshin
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee Address: JP Kariya; JP Toyota; JP Nisshin
- Agency: Posz Law Group, PLC
- Priority: JP2021-094356 20210604
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31 ; H01L23/433

Abstract:
A semiconductor device includes a power module, a circuit package, and a joint portion joining the power module and the circuit package. The circuit package includes a semiconductor element, a wiring layer electrically connected with the semiconductor element, a heat conductive member, and a second mold resin portion sealing the semiconductor element and the heat conductive member. The wiring layer includes a connecting portion connected with the heat conductive member. One of the connecting portion or the heat conductive member is joined with a signal wire in the power module via the joint portion. The heat conductive member penetrates the second mold resin portion in a thickness direction of the semiconductor element. The heat conductive member and the connecting portion are arranged in a straight line in the thickness direction of the semiconductor element.
Public/Granted literature
- US20220392828A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-12-08
Information query
IPC分类: