Invention Grant
- Patent Title: Semiconductor laser with a mode expansion layer
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Application No.: US17561187Application Date: 2021-12-23
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Publication No.: US12255440B2Publication Date: 2025-03-18
- Inventor: Ning Cheng , Xiang Liu , Frank Effenberger
- Applicant: Huawei Technologies Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Huawei Technologies Co., Ltd.
- Current Assignee: Huawei Technologies Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Conley Rose, P.C.
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/20 ; H01S5/22 ; H01S5/34 ; H01S5/343 ; H01S5/32
Abstract:
A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within the second cladding layer, or both the first mode expansion layer within the first cladding layer and the second mode expansion layer within the second cladding.
Public/Granted literature
- US20220115841A1 Semiconductor Laser With a Mode Expansion Layer Public/Granted day:2022-04-14
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