Invention Grant
- Patent Title: Static random-access memory (SRAM) apparatus and method for reducing wire delay
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Application No.: US18051142Application Date: 2022-10-31
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Publication No.: US12293806B2Publication Date: 2025-05-06
- Inventor: Lava Kumar Pulluru , Gopi Sunanth Kumar Gogineni , Manish Chandra Joshi , Pushp Khatter
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: IN202241049601 20220830
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/12 ; G11C7/22

Abstract:
Various example embodiments of the inventive concepts include a SRAM apparatus including a left memory array and right memory array, each of the left memory array and the right memory array including a left memory array and a right memory array, each comprising a plurality of columns, the plurality of columns in each of the left memory array and the right memory array divided into a plurality of segments, and each of the segments comprising a plurality of memory bit cells, and central driver circuitry comprising a plurality of driver devices, each of the plurality of driver devices communicatively connected to a corresponding segment of the plurality of segments through a corresponding metal control line of a plurality of metal control lines, the central driver circuitry configured to route at least one array signal to at least one segment of the plurality of segments.
Public/Granted literature
- US20240071438A1 STATIC RANDOM-ACCESS MEMORY (SRAM) APPARATUS AND METHOD FOR REDUCING WIRE DELAY Public/Granted day:2024-02-29
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