Invention Grant
- Patent Title: Method of producing large EMI shielded GaAs infrared windows
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Application No.: US18073179Application Date: 2022-12-01
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Publication No.: US12302542B2Publication Date: 2025-05-13
- Inventor: Peter G. Schunemann , Kevin T. Zawilski
- Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Current Assignee: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Maine Cernota & Curran
- Agent Gary McFaline
- Main IPC: C30B17/00
- IPC: C30B17/00 ; C09D5/00 ; C23C16/30 ; C23C16/52 ; C30B29/42 ; C30B29/60 ; C30B35/00 ; H05K9/00

Abstract:
GaAs IR window slabs having largest dimensions that are greater than 8 inches, and preferably greater than 12 inches, are grown using the Horizontal Gradient Freeze (HGF) method. Heat extraction is simplified by using a shallow horizontal boat that is only slightly deeper than the desired window thickness, thereby enabling growth of large slabs while also minimizing material waste and fabrication cost as compared to slicing and shaping thick plates from large, melt-grown boules. Single crystal seeds can be used to optimize the final orientation of the slabs and minimize secondary nucleation, thereby maximizing yield. A conductive doped GaAs layer can be applied to the IR window slab to provide EMI shielding. The temperature gradient during HGF can be between 1° C./cm and 3° C./cm, and the directional solidification can be at a rate of between 0.25 mm/h and 2.5 mm/h.
Public/Granted literature
- US20240188261A1 METHOD OF PRODUCING LARGE EMI SHIELDED GaAs INFRARED WINDOWS Public/Granted day:2024-06-06
Information query
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