Invention Grant
- Patent Title: Dual vertical gate and image sensor including the same
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Application No.: US17657010Application Date: 2022-03-29
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Publication No.: US12302655B2Publication Date: 2025-05-13
- Inventor: Dongmin Han , Wonhyeok Kim , Seongjoo Nah , Heegeun Jeong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: MORGAN, LEWIS & BOCKIUS LLP
- Priority: KR10-2021-0096003 20210721
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H10F39/00 ; H10F39/18

Abstract:
An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.
Public/Granted literature
- US20230022805A1 DUAL VERTICAL GATE AND IMAGE SENSOR INCLUDING THE SAME Public/Granted day:2023-01-26
Information query
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