A method of manufacturing an active matrix device (10) comprising a row and column array of active elements wherein each element comprises a transparent pixel electrode (12) associated with a self-aligned, top gate transistor (14, R2) having a transparent gate electrode (26). The method comprising the steps of forming opaque source (22) and drain (22null) electrodes on a transparent substrate (51); forming a semiconductor channel layer (23) so as to join source (22) and drain (22null) electrodes; forming a gate insulating (24, 25) layer; and depositing a transparent conductive layer and forming both the transparent gate electrode (26) and the pixel electrode (32) therefrom. The transparent gate electrode (26) may be formed by depositing a layer of negative resist (52) over the transparent conductive layer, exposing the layer of negative resist through the substrate such that regions of the negative resist shadowed by the opaque electrodes (22, 22null) remain unexposed, removing the unexposed negative and, having masked the region (53) associated with the transparent pixel electrode (32), removing the exposed transparent conductive layer.