- 专利标题: Dual element magnetoresistive read head with integral element stabilization
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申请号: US09887835申请日: 2001-06-22
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公开(公告)号: US20010033467A1公开(公告)日: 2001-10-25
- 发明人: Bradley N. Engel , Richard H. Dee , Robert B. Chesnutt
- 申请人: Storage Technology Corporation
- 申请人地址: CO Louisville
- 专利权人: Storage Technology Corporation
- 当前专利权人: Storage Technology Corporation
- 当前专利权人地址: CO Louisville
- 主分类号: G11B005/39
- IPC分类号: G11B005/39
摘要:
A dual active element magnetoresistive tape read head uses weak biasing of active layers to reduce Barkhausen noise. The read head includes a first insulator layer. A first active magnetoresistive layer is built on the first insulator layer. A second insulator layer is built on the first active magnetoresistive layer. A second active magnetoresistive layer is on the second insulator layer. The second active magnetoresistive layer is magnetostatically coupled to the first active magnetoresistive layer. A third insulator layer is on the second active magnetoresistive layer. At least one insulator layer is a biasing layer comprised of an electrically nonconductive antiferromagnetic material.
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