Invention Application
US20020094003A1 Structure and method for index-guided buried heterostructure AlGalnN laser diodes
有权
索引引导掩埋异质结AlGalnN激光二极管的结构与方法
- Patent Title: Structure and method for index-guided buried heterostructure AlGalnN laser diodes
- Patent Title (中): 索引引导掩埋异质结AlGalnN激光二极管的结构与方法
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Application No.: US10025462Application Date: 2001-12-26
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Publication No.: US20020094003A1Publication Date: 2002-07-18
- Inventor: David P. Bour , Michael A. Kneissl , Linda T. Romano
- Applicant: Xerox Corporation
- Applicant Address: null
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: null
- Main IPC: H01S005/00
- IPC: H01S005/00

Abstract:
An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
Public/Granted literature
- US06875627B2 Structure and method for index-guided buried heterostructure AlGaInN laser diodes Public/Granted day:2005-04-05
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