Invention Application
US20020094678A1 Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate 失效
制造单晶衬底的方法和包括这种衬底的集成电路

  • Patent Title: Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate
  • Patent Title (中): 制造单晶衬底的方法和包括这种衬底的集成电路
  • Application No.: US10044402
    Application Date: 2002-01-11
  • Publication No.: US20020094678A1
    Publication Date: 2002-07-18
  • Inventor: Olivier MenutYvon Gris
  • Applicant: STMICROELECTRONICS S.A.
  • Applicant Address: FR MONTROUGE
  • Assignee: STMICROELECTRONICS S.A.
  • Current Assignee: STMICROELECTRONICS S.A.
  • Current Assignee Address: FR MONTROUGE
  • Priority: FR0100414 20010112
  • Main IPC: C21D001/00
  • IPC: C21D001/00
Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate
Abstract:
An initial single-crystal substrate 1 having, locally and on the surface, at least one discontinuity in the single-crystal lattice is formed. The initial substrate is recessed at the discontinuity. The single-crystal lattice is amorphized around the periphery ofthe recess. A layer ofamorphous material having the same chemical composition as that ofthe initial substrate is deposited on the structure obtained. The structure obtained is thermally annealed in order to recrystallize the amorphous material so as to be continuous with the single-crystal lattice ofthe initial substrate.
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