Tantalum sputtering target with fine grains and uniform texture and method of manufacture

Invention Application

US20020125128A1 Tantalum sputtering target with fine grains and uniform texture and method of manufacture 有权

Title translation: 钽溅射靶具有细颗粒和均匀的织构和制造方法

Please log in to see more content

Patent Title: Tantalum sputtering target with fine grains and uniform texture and method of manufacture
Patent Title (中): 钽溅射靶具有细颗粒和均匀的织构和制造方法
Application No.: US09999095

Application Date: 2001-10-30
Publication No.: US20020125128A1

Publication Date: 2002-09-12
Inventor: Stephen P. Turner
Applicant: Honywell International Inc.
Applicant Address: null
Assignee: Honywell International Inc.
Current Assignee: Honywell International Inc.
Current Assignee Address: null
Main IPC: C23C014/34
IPC: C23C014/34 ; C22F001/18 ; C22C014/00

Tantalum sputtering target with fine grains and uniform texture and method of manufacture

Abstract:

A method for producing a tantalum sputtering component includes a minimum of three stages each of which include a deformation step followed by an inert atmosphere high-temperature anneal. Temperatures of each of the anneal steps can be different from one another. A tantalum sputtering component includes a mean grain size of less than about 100 microns and a uniform texture throughout the component thickness. The uniform texture can be predominately null111null .

Abstract(Chinese):

一种制造钽溅射元件的方法包括至少三个阶段，每个阶段包括随后是惰性气氛高温退火的变形步骤。每个退火步骤的温度可以彼此不同。钽溅射组件包括小于约100微米的平均粒度和整个组件厚度均匀的质地。统一纹理主要可以是{111} 。

Public/Granted literature

US07101447B2 Tantalum sputtering target with fine grains and uniform texture and method of manufacture Public/Granted day:2006-09-05

Information query

Global Dossier Espacenet