Invention Application
- Patent Title: Cold cathode
- Patent Title (中): 冷阴极
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Application No.: US10062037Application Date: 2002-05-31
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Publication No.: US20020135311A1Publication Date: 2002-09-26
- Inventor: Zvi Yaniv , Richard Lee Fink , Zhidan Li Tolt
- Applicant: SI Diamond Technology, Inc.
- Applicant Address: US TX Austin
- Assignee: SI Diamond Technology, Inc.
- Current Assignee: SI Diamond Technology, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G09G003/10
- IPC: G09G003/10
Abstract:
A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.
Public/Granted literature
- US06580225B2 Cold cathode Public/Granted day:2003-06-17
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