In order to suppress generation of waste matter which results from removing a backside film formed by growing a film on both surfaces of a semiconductor substrate and thereby attain satisfactorily high yield and productivity, on a semiconductor substrate 301, a polycrystalline silicon film 303 is formed through double-sided growth, and only on the obverse surface of the semiconductor substrate 301 a silicide film 304 is formed thereon, and then those polycrystalline silicon film 303 and silicide film 304 are worked into shape to form gate electrodes 303a. After that, on the semiconductor substrate 301, an insulating film for sidewall formation is formed to cover the gate electrodes 303a through double-sided growth, and the insulating film for sidewall formation formed on the obverse surface of the semiconductor substrate 301 is etched to form sidewall films. Only on the obverse surface side of the semiconductor substrate 301, an interlayer insulating film is formed to cover the gate electrodes 303a, and thereafter the polycrystalline silicon film 303 and the insulating film for sidewall formation, both of which are formed on the reverse surface side of the semiconductor substrate 301, as well as a part of said semiconductor substrate 301 in depth from the reverse surface are removed by grinding, whereby a semiconductor device is fabricated.