发明申请
- 专利标题： System and method for eliminating design rule violations during construction of a mask layout block
- 专利标题（中）： 在构造掩模布局块期间消除设计规则违规的系统和方法
-
申请号： US10180177申请日： 2002-06-26
-
公开(公告)号： US20020166103A1公开(公告)日： 2002-11-07
- 发明人: Dan Rittman , Micha Oren
- 申请人： DuPont Photomasks, Inc., a Delaware corporation
- 申请人地址： null
- 专利权人： DuPont Photomasks, Inc., a Delaware corporation
- 当前专利权人： DuPont Photomasks, Inc., a Delaware corporation
- 当前专利权人地址： null
- 主分类号： G06F017/50
- IPC分类号： G06F017/50
摘要：
A system and method for eliminating design rule violations during construction of a mask layout block are disclosed. The method includes analyzing a selected position for a polygon in a mask layout block and obtaining one or more design rules associated with the polygon from a technology file. The method provides a hint area associated with the selected position for the polygon that graphically represents a space in the mask layout block where the selected position complies with the design rule violation.
公开/授权文献
信息查询
