Invention Application
- Patent Title: Capacitor having tantalum oxynitride film and method for making same
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Application No.: US10232206Application Date: 2002-08-29
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Publication No.: US20030001194A1Publication Date: 2003-01-02
- Inventor: Scott Jeffrey DeBoer , Husam N. Al-Shareef , Randhir P.S. Thakur , Dan Gealy
- Applicant: Micron Technology, Inc.
- Applicant Address: null
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: null
- Main IPC: H01L027/108
- IPC: H01L027/108 ; H01L029/76 ; H01L031/119
Abstract:
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.
Public/Granted literature
- US06864527B2 Capacitor having tantalum oxynitride film and method for making same Public/Granted day:2005-03-08
Information query
