Invention Application
US20030007106A1 Method for manufacturing active matrix type liquid crystal display device 有权
有源矩阵型液晶显示装置的制造方法

  • Patent Title: Method for manufacturing active matrix type liquid crystal display device
  • Patent Title (中): 有源矩阵型液晶显示装置的制造方法
  • Application No.: US10173897
    Application Date: 2002-06-18
  • Publication No.: US20030007106A1
    Publication Date: 2003-01-09
  • Inventor: Michiaki SakamotoYuichi Yamaguchi
  • Applicant: NEC CORPORATION
  • Applicant Address: null
  • Assignee: NEC CORPORATION
  • Current Assignee: NEC CORPORATION
  • Current Assignee Address: null
  • Priority: JP2001-189873 20010622
  • Main IPC: G02F001/136
  • IPC: G02F001/136
Method for manufacturing active matrix type liquid crystal display device
Abstract:
A TFT and a passivation film are formed on a transparent substrate and thereafter the passivation film is annealed. When measuring drain currents of a TFT at a fixed turn-on voltage (Von) and a fixed turn-off voltage (Voff), although performance of a TFT annealed (solid line) rarely changes, performance of a TFT not annealed (dashed line) changes to a large extent, in more detail, drain current drastically decreases in accordance with the change of TFT performance. This phenomenon means that on-resistance of a TFT not annealed is being increased to a great extent.
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