Invention Application
- Patent Title: Method of preventing junction leakage in field emission devices
- Patent Title (中): 防止场致发射装置结漏的方法
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Application No.: US10191677Application Date: 2002-07-08
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Publication No.: US20030025441A1Publication Date: 2003-02-06
- Inventor: James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
- Main IPC: H01J001/02
- IPC: H01J001/02
Abstract:
An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.
Public/Granted literature
- US06712664B2 Process of preventing junction leakage in field emission devices Public/Granted day:2004-03-30
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