Invention Application
- Patent Title: Ion beam processing apparatus and method of operating ion source therefor
- Patent Title (中): 离子束处理装置及其离子源的操作方法
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Application No.: US10261781Application Date: 2002-10-02
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Publication No.: US20030030009A1Publication Date: 2003-02-13
- Inventor: Shigeru Tanaka , Isao Hashimoto
- Applicant: Hitachi, Ltd.
- Applicant Address: null
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: null
- Priority: JP10-356606 19981215
- Main IPC: H01J027/00
- IPC: H01J027/00

Abstract:
An ion beam processing apparatus and a method of operating an ion source therefor are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.
Public/Granted literature
- US06635998B2 Ion beam processing apparatus and method of operating ion source therefor Public/Granted day:2003-10-21
Information query