Invention Application
- Patent Title: Low-noise CMOS Active pixel
- Patent Title (中): 低噪声CMOS有源像素
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Application No.: US10156710Application Date: 2002-05-28
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Publication No.: US20030034434A1Publication Date: 2003-02-20
- Inventor: Laurent Simony
- Applicant: STMICROELECTRONICS S.A.
- Applicant Address: FR MONTROUGE
- Assignee: STMICROELECTRONICS S.A.
- Current Assignee: STMICROELECTRONICS S.A.
- Current Assignee Address: FR MONTROUGE
- Priority: FR0107349 20010528
- Main IPC: H01L027/00
- IPC: H01L027/00

Abstract:
A CMOS active pixel for image sensors has a photosensitive element, a capacitive feedback element with a capacitance CF, and four transistors, namely a first transistor, two reset transistors and a transistor for the selection of the pixel. These transistors are laid out and controlled in such a way that the first transistor is mounted as an amplifier during the pixel reset phase and as a follower during the read phase.
Public/Granted literature
- US06664530B2 Low-noise CMOS active pixel having control signals active/inactive during a reset phase Public/Granted day:2003-12-16
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