发明申请
US20030049931A1 Formation of refractory metal nitrides using chemisorption techniques
审中-公开
使用化学吸附技术形成难熔金属氮化物
- 专利标题： Formation of refractory metal nitrides using chemisorption techniques
- 专利标题（中）： 使用化学吸附技术形成难熔金属氮化物
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申请号： US09960469申请日： 2001-09-19
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公开(公告)号： US20030049931A1公开(公告)日： 2003-03-13
- 发明人: Jeong Soo Byun , Lin Yin , Frederick C. Wu , Ramanujapuram A. Srinivas , Avgerinos Gelatos , Alfred W. Mak , Mei Chang , Moris Kori , Ashok K. Sinha
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： null
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： null
- 主分类号： H01L021/4763
- IPC分类号： H01L021/4763
摘要：
Refractory metal nitride layers for integrated circuit fabrication are described. The refractory metal nitride layer may be formed by sequentially chemisorbing alternating monolayers of a nitrogen-containing compound and a refractory metal compound onto a substrate. A composite refractory metal nitride layer is also described. The composite refractory metal nitride layer may be formed by sequentially chemisorbing monolayers of a nitrogen-containing compound and two or more refractory metal compounds onto a substrate.
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