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US20030067009A1 Structure and method for electrical isolation of optoelectronic integrated circuits 有权
光电集成电路电气隔离的结构和方法

Structure and method for electrical isolation of optoelectronic integrated circuits
Abstract:
Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
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