发明申请
- 专利标题： Method for fabricating a semiconductor device and a substrate processing apparatus
- 专利标题（中）： 半导体装置的制造方法以及基板处理装置
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申请号： US10234520申请日： 2002-09-05
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公开(公告)号： US20030119288A1公开(公告)日： 2003-06-26
- 发明人: Hirohisa Yamazaki , Takaaki Noda
- 申请人： Hitachi Kokusai Electric Inc.
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-268265 20010905
- 主分类号： H01L021/22
- IPC分类号： H01L021/22 ; H01L021/38
摘要：
A substrate processing apparatus for forming a boron doped silicon-germanium film on one or more substrates in a reaction furnace of a low pressure CVD apparatus uses a mixture gas of GeH4 and SiH4 as a reaction gas, and BCl3 as a doping gas. The substrate processing apparatus includes a plurality of gas outlets for supplying GeH4 at different locations in the reaction tube and a doping gas line for supplying BCl3 at least at an upstream side of gas flow in the reaction tube.
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