Invention Application
US20030133638A1 Ion implanted lithium niobate modulator with reduced drift 审中-公开
离子注入铌酸锂调制器,漂移降低

  • Patent Title: Ion implanted lithium niobate modulator with reduced drift
  • Patent Title (中): 离子注入铌酸锂调制器,漂移降低
  • Application No.: US10050656
    Application Date: 2002-01-16
  • Publication No.: US20030133638A1
    Publication Date: 2003-07-17
  • Inventor: Sungho JinYiu-Man WongWei ZhuChristopher A. Bower
  • Main IPC: G02F001/035
  • IPC: G02F001/035
Ion implanted lithium niobate modulator with reduced drift
Abstract:
An electrooptic device and method for making the same, including one or more of substrate, a buffer layer, a charge dissipation layer, and electrodes are disclosed. Active ions, such as Fnull ions, are implanted the buffer layer. The active ions react with positive ions, such as Linull from the substrate to form stable compounds such as LiF. The reduced number of mobile Linull ions reduces the DC drift of the associated electrooptic device. The profile of the implanted ions may be adjusted to control and/or optimize the properties of the electrooptic device. Fluorine is particularly advantageous because it also lowers the dielectric constant, thereby facilitating higher frequency operation.
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