发明申请
- 专利标题: Semiconductor laser
- 专利标题(中): 半导体激光器
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申请号: US10348142申请日: 2003-01-21
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公开(公告)号: US20030142709A1公开(公告)日: 2003-07-31
- 发明人: Richard Mark Ash , Christopher Anthony Park
- 申请人: Agilent Technologies, Inc.
- 申请人地址: null
- 专利权人: Agilent Technologies, Inc.
- 当前专利权人: Agilent Technologies, Inc.
- 当前专利权人地址: null
- 优先权: EP02250465.8 20020123
- 主分类号: H01S003/13
- IPC分类号: H01S003/13 ; H01S003/04
摘要:
The present invention relates to the control or stabilisation of the lasing wavelength of a source of laser radiation (8), comprising a semiconductor material laser (2), a substrate (4) to which the laser (2) is mounted, a resonant optical cavity (15) within the semiconductor material (16,18,20), the cavity (15) having an active medium (16) for generating laser radiation (8) and one or more gaps (28) in the semiconductor material (16,18,20) within the cavity (15), wherein the substrate (4) is deformable by the application of a mechanical stress (14) to vary the size of said gap(s) (28) in order to change the optical size of said gap(s) and hence to vary the wavelength of laser radiation (8) generated by the semiconductor laser (2).
公开/授权文献
- US06778577B2 Semiconductor laser 公开/授权日:2004-08-17