An autotesting method of a cells matrix of a memory device is disclosed which comprises the steps of: reading the values contained in a plurality of the memory cells; comparing the read values with reference values; signalling mismatch of the read values with the reference values as an error situation; and storing the error situations. In the autotesting method, the reading, comparing, signalling, and storing steps are repeated for all the memory cells in an matrix column. The autotesting method according to the invention further comprises the steps of storing the positions of any columns having at least one one error situation; and repeating all of the preceding steps according to a step of scanning all the matrix columns.